zpioducti, {jnc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 BLX95 u.h.f. power transistor n-p-n silicon planar epitaxial transistor intended for transmitting applications in class-a, b or c in the u.h.f. frequency range for supply voltages up to 28 v. the transistor is resistance stabilized and is tested under severe load mismatch conditions. due to a gold metallization excellent reliability proper- ties have been obtained. the transistor is housed in a capstan envelope with a mpulded cap. all leads are isolated from the stud. quick reference data r.f. performance up to tn = 25 c in an unneutralized common-emitter class-b circuit mode of operation c.w. c.w. vce v 28 28 f mhz 470 175 ps w < 14,2 typ. 3,2 pl w 40 40 'c a < 2,4 typ. 1,9 gp db > 4,5 typ. 1 1 v % > 60 typ. 75 mechanical data fig. 1 sot-56. dimensions in mm en: ? 10-32unf 1,9 __ max ? ? 11,5 ? ,. -r 3,0 ? 0.14 ? | 2.7 " 6,75 _ 10.7 torque on nut: min. 1,6 mm (15 kg cm) max. 1,7 nm (17 kg cm) when locking is required an adhesive is preferred instead of a lock washer. diameter of clearance hole in heatsink: max. 4,9 mm. mounting hole to have no burrs at either end. de-burring must leave surface flat; do not chamfer or countersink either end of hole. product safety this device incorporates beryllium oxide, the dust of which is toxic. the device is entirely safe provided that the beo disc is not damaged. nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by nj semi-conductors is believed to be both accurate and reliable at the time of aoing to press. however nj semi-conductors assumes no responsibility for any errors or omissions discoveted in its use. nj semi-conduetors encourages customers to verify that datasheets are current before placing orders. h? ^.avmi-./* a~* *??? ?*-a.v?m*-
ratings limiting values in accordance with the absolute maximum system collector-base voltage (open emitter) peak value collector-emitter voltage (rjjp, = 10q) peak value collector-emitter voltage (open base) emitter-base voltage (open collector) collector current (average) collector current (peak value) f > 1 mhz 2 7z675j9 10' (a) 10 10 -1 d.c. soar =- 1 't< 'i'h- rth )t mi mil s25 c \ (d.c.) \ - 1 10 vce (v) storage temperature junction temperature thermal resistance from junction to mounting base from mounting base to heatsink vcbom max. 65 v 150 ptot (w) 100 vcerm vceo vebo ic(av) icm max. max. max. max. max. 65 30 4 3,0 10,0 v v v a a 7z675&0 50 f a 1 mhz short time operation . vswr > 3 - -n -i 1 1 1 1 1 n "h ?a "" j_l . 7 ?s ?> ?n r< *,t ormal operation vswr < 3 ^ v ?vj o, ^ ^ 4 **t 1 s*, sk "4 fr1 ?>. -?x rth j-mb rth mb-h = 50 th (c) 100 -65 to +200 c max. 200 c 2,0 k/w 0,3 k/w
characteristics tj = 25 c unless otherwise specified breakdown voltages collector-base voltage open emitter, ig = 50 ma collector-emitter voltage rbe - io2, ig so ma collector-emitter voltage open base, ig = 50 ma emitter-base voltage open collector, ie = 10 ma transient energy l = 25 mh; f = 50 hz open base -vbe = i,5 v; rbe = 33 q d.c. current gain ig = 1,0 a; vce = s v transition frequency 1c = 4 a: vce = 25 v collector capacitance at f = 1 mhz ie = i 0: = so v feedback capacitance at f = 1 mhz 1c = 200ma; vce = 30 v v(br)cbo > v(br)ckr > v(br)ceo > v(br)ebo > 65 65 30 4 v v v v e e ft collector-stud capacitance cre ljp fs > 4,5 ms > 4,5 ms 25 to 100 typ. 900 mhz typ, 68 pf < 80 pf typ. 39 pf typ. 2 pf
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